SO642
Hersteller:
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SO642
Description: TRANS NPN 300V 0.1A SOT-23-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Power - Max: 310 mW, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3, Frequency - Transition: 50MHz.
Weitere Produktangebote SO642
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SO642 | STMicroelectronics |
Description: TRANS NPN 300V 0.1A SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 310 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 Frequency - Transition: 50MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 18000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SO642 | STMicroelectronics |
Description: TRANS NPN 300V 0.1A SOT-23-3 Power - Max: 310 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SO642 | onsemi / Fairchild |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
SO642 | STMicroelectronics |
Bipolar Transistors - BJT NPN High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SO642 |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 300V 0.1A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
Description: TRANS NPN 300V 0.1A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 18000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SO642 |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 300V 0.1A SOT-23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 300V 0.1A SOT-23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SO642 |
|
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT
Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SO642 |
|
Hersteller: STMicroelectronics
Bipolar Transistors - BJT NPN High Voltage
Bipolar Transistors - BJT NPN High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH