SP8K24FRATB ROHM Semiconductor
auf Bestellung 3107 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
15+ | 3.48 EUR |
17+ | 3.2 EUR |
100+ | 3.04 EUR |
1000+ | 2.38 EUR |
2500+ | 1.51 EUR |
5000+ | 1.48 EUR |
10000+ | 1.41 EUR |
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Technische Details SP8K24FRATB ROHM Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 45V; 6A; Idm: 24A; 2W; SOP8, Mounting: SMD, Case: SOP8, Kind of package: reel; tape, Power dissipation: 2W, Pulsed drain current: 24A, Gate-source voltage: ±20V, Type of transistor: N-MOSFET x2, Drain-source voltage: 45V, Drain current: 6A, On-state resistance: 37mΩ, Gate charge: 15.4nC, Features of semiconductor devices: ESD protected gate, Polarisation: unipolar, Kind of channel: enhanced.
Weitere Produktangebote SP8K24FRATB
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SP8K24FRATB | Hersteller : Rohm Semiconductor | Description: 4V DRIVE NCH+NCH MOSFET (CORRESP |
auf Bestellung 2349 Stücke: Lieferzeit 21-28 Tag (e) |
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SP8K24FRATB | Hersteller : Rohm Semiconductor | Description: 4V DRIVE NCH+NCH MOSFET (CORRESP |
auf Bestellung 2349 Stücke: Lieferzeit 21-28 Tag (e) |
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SP8K24FRATB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 45V; 6A; Idm: 24A; 2W; SOP8 Mounting: SMD Case: SOP8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: 24A Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 Drain-source voltage: 45V Drain current: 6A On-state resistance: 37mΩ Gate charge: 15.4nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SP8K24FRATB | Hersteller : Rohm Semiconductor | Description: 4V DRIVE NCH+NCH MOSFET (CORRESP |
Produkt ist nicht verfügbar |
||
SP8K24FRATB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 45V; 6A; Idm: 24A; 2W; SOP8 Mounting: SMD Case: SOP8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: 24A Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 Drain-source voltage: 45V Drain current: 6A On-state resistance: 37mΩ Gate charge: 15.4nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |