SP8K24FRATB

SP8K24FRATB ROHM Semiconductor


sp8k24fra.pdf Hersteller: ROHM Semiconductor
MOSFET Nch+Nch 45V Vds 6A 0.036Rds(on) 15.4Qg
auf Bestellung 3107 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.48 EUR
17+ 3.2 EUR
100+ 3.04 EUR
1000+ 2.38 EUR
2500+ 1.51 EUR
5000+ 1.48 EUR
10000+ 1.41 EUR
Mindestbestellmenge: 15
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Technische Details SP8K24FRATB ROHM Semiconductor

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 45V; 6A; Idm: 24A; 2W; SOP8, Mounting: SMD, Case: SOP8, Kind of package: reel; tape, Power dissipation: 2W, Pulsed drain current: 24A, Gate-source voltage: ±20V, Type of transistor: N-MOSFET x2, Drain-source voltage: 45V, Drain current: 6A, On-state resistance: 37mΩ, Gate charge: 15.4nC, Features of semiconductor devices: ESD protected gate, Polarisation: unipolar, Kind of channel: enhanced.

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SP8K24FRATB SP8K24FRATB Hersteller : Rohm Semiconductor sp8k24fra.pdf Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
auf Bestellung 2349 Stücke:
Lieferzeit 21-28 Tag (e)
SP8K24FRATB SP8K24FRATB Hersteller : Rohm Semiconductor sp8k24fra.pdf Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
auf Bestellung 2349 Stücke:
Lieferzeit 21-28 Tag (e)
SP8K24FRATB SP8K24FRATB Hersteller : ROHM SEMICONDUCTOR sp8k24fra.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 45V; 6A; Idm: 24A; 2W; SOP8
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: 24A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Drain-source voltage: 45V
Drain current: 6A
On-state resistance: 37mΩ
Gate charge: 15.4nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
SP8K24FRATB SP8K24FRATB Hersteller : Rohm Semiconductor sp8k24fra.pdf Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
Produkt ist nicht verfügbar
SP8K24FRATB SP8K24FRATB Hersteller : ROHM SEMICONDUCTOR sp8k24fra.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 45V; 6A; Idm: 24A; 2W; SOP8
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: 24A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Drain-source voltage: 45V
Drain current: 6A
On-state resistance: 37mΩ
Gate charge: 15.4nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar