SP8K3FRATB ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFETs 30V Nch+Nch Power MOSFET - SP8K3FRA is a Power MOSFET with Low on-resistance, suitable for switching. It is a highly reliable product for automotive.
auf Bestellung 2500 Stücke:
Lieferzeit 122-126 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.38 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.18 EUR |
| 2500+ | 1.09 EUR |
| 5000+ | 1.07 EUR |
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Technische Details SP8K3FRATB ROHM Semiconductor
Description: MOSFET 2N-CH 30V 7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SP8K3FRATB nach Preis ab 1.23 EUR bis 3.82 EUR
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SP8K3FRATB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1051 Stücke: Lieferzeit 10-14 Tag (e) |
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SP8K3FRATB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 7A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
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