SP8K3FRATB ROHM
Hersteller: ROHM
Description: ROHM - SP8K3FRATB - Dual-MOSFET, n-Kanal, 30 V, 7 A, 0.017 ohm, SOP, Oberflächenmontage
SVHC: Lead (08-Jul-2021)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 3.05 EUR |
| 96+ | 2.44 EUR |
| 125+ | 1.73 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.33 EUR |
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Technische Details SP8K3FRATB ROHM
Description: MOSFET 2N-CH 30V 7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SP8K3FRATB nach Preis ab 1.46 EUR bis 4.55 EUR
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SP8K3FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 7A 8SOP Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) |
auf Bestellung 1051 Stücke: Lieferzeit 10-14 Tag (e) |
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| SP8K3FRATB |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A 8SOP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 30V 7A 8SOP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
auf Bestellung 1051 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.55 EUR |
| 10+ | 2.92 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.46 EUR |