SP8M21HZGTB Rohm Semiconductor
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 93+ | 1.56 EUR |
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Technische Details SP8M21HZGTB Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 45V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SP8M21HZGTB nach Preis ab 1.78 EUR bis 5.37 EUR
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SP8M21HZGTB | Hersteller : Rohm Semiconductor |
 Trans MOSFET N/P-CH 45V 6A/4A 8-Pin SOP T/R Automotive AEC-Q101 |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8M21HZGTB | Hersteller : ROHM Semiconductor |
MOSFETs AECQ |
auf Bestellung 4682 Stücke: Lieferzeit 10-14 Tag (e) |
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SP8M21HZGTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 6A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
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SP8M21HZGTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 6A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
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