SP8M24FRATB ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 2.87 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.28 EUR |
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Technische Details SP8M24FRATB ROHM Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP, Part Status: Not For New Designs, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V, Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta), Drain to Source Voltage (Vdss): 45V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote SP8M24FRATB
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SP8M24FRATB | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 4.5A 8SOPTechnology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Not For New Designs Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 45V Power - Max: 2W Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
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SP8M24FRATB | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 4.5A 8SOPPart Status: Not For New Designs Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 45V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
