| Anzahl | Preis |
|---|---|
| 1+ | 3.52 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.19 EUR |
| 2500+ | 1.03 EUR |
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Technische Details SP8M41HZGTB ROHM Semiconductor
Description: MOSFET N/P-CH 80V 3.4A 8SOP, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V, Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta), Drain to Source Voltage (Vdss): 80V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SP8M41HZGTB nach Preis ab 1.22 EUR bis 3.57 EUR
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SP8M41HZGTB | Rohm Semiconductor |
 Description: MOSFET N/P-CH 80V 3.4A 8SOPQualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta) Drain to Source Voltage (Vdss): 80V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 1889 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SP8M41HZGTB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1889 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.57 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.22 EUR |