SP8M51FRATB ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.02 EUR |
| 10+ | 3.22 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.64 EUR |
| 2500+ | 1.5 EUR |
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Technische Details SP8M51FRATB ROHM Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V, Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SP8M51FRATB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SP8M51FRATB | Rohm Semiconductor |
 Description: MOSFET N/P-CH 100V 3A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
SP8M51FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SP8M51FRATB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SP8M51FRATB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 100V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH