| Anzahl | Preis |
|---|---|
| 1+ | 3.54 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.22 EUR |
| 2500+ | 1.05 EUR |
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Technische Details SP8M51HZGTB ROHM Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V, Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta), Drain to Source Voltage (Vdss): 100V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SP8M51HZGTB nach Preis ab 1.27 EUR bis 3.63 EUR
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SP8M51HZGTB | Hersteller : Rohm Semiconductor |
 Description: MOSFET N/P-CH 100V 3A 8SOPVgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SOP |
auf Bestellung 718 Stücke: Lieferzeit 10-14 Tag (e) |
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SP8M51HZGTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A 8SOP Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
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