SP8M5FRATB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Technische Details SP8M5FRATB Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A 8SOP, Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Weitere Produktangebote SP8M5FRATB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SP8M5FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 6A 8SOPConfiguration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SP8M5FRATB | ROHM Semiconductor |
MOSFETs Nch+Pch 30V Vds 7A 0.03Rds(on) 7.2Qg |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SP8M5FRATB |
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Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A 8SOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N/P-CH 30V 6A 8SOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SP8M5FRATB |
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Hersteller: ROHM Semiconductor
MOSFETs Nch+Pch 30V Vds 7A 0.03Rds(on) 7.2Qg
MOSFETs Nch+Pch 30V Vds 7A 0.03Rds(on) 7.2Qg
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
