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SPA11N60CFDXKSA1

SPA11N60CFDXKSA1 Infineon Technologies


spa11n60cfd_rev1.2.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
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Technische Details SPA11N60CFDXKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 11A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.9mA, Supplier Device Package: PG-TO220-3-31, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.

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SPA11N60CFDXKSA1 SPA11N60CFDXKSA1 Hersteller : Infineon Technologies SPA11N60CFD_rev1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c0b7e4659 Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.9mA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SPA11N60CFDXKSA1 SPA11N60CFDXKSA1 Hersteller : Infineon Technologies SPA11N60CFD_rev1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c0b7e4659 MOSFET LOW POWER_LEGACY
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