SPA11N80C3XKSA1

Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube

Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V

Hersteller: INFINEON
Description: INFINEON - SPA11N80C3XKSA1 - Leistungs-MOSFET, n-Kanal, 800 V, 11 A, 0.45 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 41W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.45ohm