auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.7 EUR |
10+ | 3.96 EUR |
25+ | 3.73 EUR |
100+ | 3.19 EUR |
250+ | 3.03 EUR |
500+ | 2.83 EUR |
1000+ | 2.29 EUR |
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Technische Details SPA11N80C3XKSA2 Infineon Technologies
Description: MOSFET N-CH 800V 11A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 680µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.
Weitere Produktangebote SPA11N80C3XKSA2 nach Preis ab 3.21 EUR bis 4.73 EUR
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SPA11N80C3XKSA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 11A TO220-3 Packaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 680µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
auf Bestellung 199 Stücke: Lieferzeit 10-14 Tag (e) |
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SPA11N80C3XKSA2 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA11N80C3XKSA2 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |