SPB08P06PGATMA1
Produktcode: 161467
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Lieblingsprodukt
Hersteller:
Gehäuse: D2PAK (TO263)
Uds,V: 60 V
Id,A: 8,8 A
Rds(on),Om: 0,3 Ohm
Ciss, pF/Qg, nC: 335/10
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Weitere Produktangebote SPB08P06PGATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SPB08P06PGATMA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 8.8A D2PAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SPB08P06PGATMA1 | Infineon Technologies |
MOSFET TRENCH 40<-<100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SPB08P06PGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 8.8A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 8.8A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPB08P06PGATMA1 |
|
Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
MOSFET TRENCH 40<-<100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH