SPB20N60S5ATMA1 Infineon Technologies
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 3.56 EUR |
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Technische Details SPB20N60S5ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 20A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote SPB20N60S5ATMA1 nach Preis ab 3.58 EUR bis 3.58 EUR
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SPB20N60S5ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SPB20N60S5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPB20N60S5ATMA1 | Hersteller : Infineon |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPB20N60S5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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SPB20N60S5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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SPB20N60S5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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SPB20N60S5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 20A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
Produkt ist nicht verfügbar |
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SPB20N60S5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 20A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
Produkt ist nicht verfügbar |
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SPB20N60S5ATMA1 | Hersteller : Infineon Technologies |
MOSFETs N |
Produkt ist nicht verfügbar |