SPD01N60C3BTMA1 Infineon Technologies

Description: MOSFET N-CH 650V 800MA TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 3.9V @ 250µA, Power Dissipation (Max): 11W (Tc), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).