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| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 1.36 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.68 EUR |
| 2500+ | 0.58 EUR |
| 5000+ | 0.55 EUR |
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Technische Details SPD04P10P G Infineon Technologies
Description: SPD04P10 - 20V-250V P-CHANNEL PO, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 380µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V.
Weitere Produktangebote SPD04P10P G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SPD04P10PG | Hersteller : Infineon Technologies |
 Description: SPD04P10 - 20V-250V P-CHANNEL POPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V |
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