Technische Details SPD08P06P INFINEON
Description: MOSFET P-CH 60V 8.83A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO252-3, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V.
Weitere Produktangebote SPD08P06P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SPD08P06P | Hersteller : INFINEON |
 07+ TO-252/D-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPD08P06P | Hersteller : INFINEON |
TO-252/D-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPD08P06P | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 8.83A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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SPD08P06P | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 60V 8.83A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO252-3 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
Produkt ist nicht verfügbar |