SPD11N10
Hersteller:
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SPD11N10
Description: MOSFET N-CH 100V 10.5A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 4V @ 21µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 7.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote SPD11N10
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
SPD11N10 | Infineon Technologies |
Description: MOSFET N-CH 100V 10.5A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 4V @ 21µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SPD11N10 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10.5A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 21µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 10.5A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 21µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH