SPD15P10PGBTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET P-CH 100V 15A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.75 EUR |
| 5000+ | 0.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SPD15P10PGBTMA1 Infineon Technologies
Description: MOSFET P-CH 100V 15A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1.54mA, Supplier Device Package: PG-TO252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SPD15P10PGBTMA1 nach Preis ab 0.74 EUR bis 3.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 100V 15A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 100V 15A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1.54mA Supplier Device Package: PG-TO252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 100V 15A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 100V 15A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
MOSFETs P-Ch -100V 15A DPAK-2 |
auf Bestellung 4693 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 100V 15A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1.54mA Supplier Device Package: PG-TO252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3949 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SPD15P10PGBTMA1 | Hersteller : INFINEON |
Description: INFINEON - SPD15P10PGBTMA1 - HF-FET-Transistor, -100 V, -15 A, 128 W, TO-252 tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: -100V rohsCompliant: YES Dauer-Drainstrom Id: -15A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebsfrequenz, max.: - Betriebsfrequenz, min.: - euEccn: NLR Verlustleistung: 128W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2297 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 100V 15A Automotive 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 100V 15A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 100V 15A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
SPD15P10PGBTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 128W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SPD15P10PGBTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 128W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |