SPD15P10PGBTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 15A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
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Technische Details SPD15P10PGBTMA1 Infineon Technologies
Description: MOSFET P-CH 100V 15A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1.54mA, Supplier Device Package: PG-TO252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SPD15P10PGBTMA1 nach Preis ab 1.02 EUR bis 3.29 EUR
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SPD15P10PGBTMA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 15A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1.54mA Supplier Device Package: PG-TO252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3576 Stücke: Lieferzeit 10-14 Tag (e) |
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SPD15P10PGBTMA1 | Infineon Technologies |
MOSFETs P-Ch -100V 15A DPAK-2 |
auf Bestellung 3299 Stücke: Lieferzeit 10-14 Tag (e) |
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SPD15P10PGBTMA1 | INFINEON |
Description: INFINEON - SPD15P10PGBTMA1 - HF-FET-Transistor, -100 V, -15 A, 128 W, TO-252 tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: -100V rohsCompliant: YES Dauer-Drainstrom Id: -15A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y MSL: MSL 1 - unbegrenzt Betriebsfrequenz, max.: - Betriebsfrequenz, min.: - Verlustleistung: 128W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 175°C |
auf Bestellung 1490 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SPD15P10PGBTMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 15A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 15A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3576 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.24 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.08 EUR |
| SPD15P10PGBTMA1 |
|
Hersteller: Infineon Technologies
MOSFETs P-Ch -100V 15A DPAK-2
MOSFETs P-Ch -100V 15A DPAK-2
auf Bestellung 3299 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.29 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.08 EUR |
| 2500+ | 1.02 EUR |
| SPD15P10PGBTMA1 |
|
Hersteller: INFINEON
Description: INFINEON - SPD15P10PGBTMA1 - HF-FET-Transistor, -100 V, -15 A, 128 W, TO-252
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: -100V
rohsCompliant: YES
Dauer-Drainstrom Id: -15A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Betriebsfrequenz, max.: -
Betriebsfrequenz, min.: -
Verlustleistung: 128W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Description: INFINEON - SPD15P10PGBTMA1 - HF-FET-Transistor, -100 V, -15 A, 128 W, TO-252
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: -100V
rohsCompliant: YES
Dauer-Drainstrom Id: -15A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Betriebsfrequenz, max.: -
Betriebsfrequenz, min.: -
Verlustleistung: 128W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)