SPD18P06P G Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET P-CH 60V 18.6A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 77+ | 2.05 EUR |
| 100+ | 1.89 EUR |
| 250+ | 1.75 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.51 EUR |
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Technische Details SPD18P06P G Infineon Technologies
Description: SPD18P06 - 20V-250V P-CHANNEL PO, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V.
Weitere Produktangebote SPD18P06P G nach Preis ab 0.88 EUR bis 2.22 EUR
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SPD18P06P G | Hersteller : Infineon Technologies |
MOSFET P-Ch -60V -18.6A DPAK-2 |
auf Bestellung 10739 Stücke: Lieferzeit 10-14 Tag (e) |
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| SPD18P06PG | Hersteller : Infineon |
Transistor P-Channel MOSFET; 60V; 20V; 130mOhm; 18,6A; 80W; -55°C ~ 175°C; SPD18P06PGBTMA1 SPD18P06P G TSPD18p06p Anzahl je Verpackung: 10 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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auf Bestellung 5638 Stücke: Lieferzeit 21-28 Tag (e) |
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SPD18P06PG | Hersteller : Infineon Technologies |
Description: SPD18P06 - 20V-250V P-CHANNEL PO Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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