Technische Details SPD50N03S2-07 INFINEON
Description: MOSFET N-CH 30V 50A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 4V @ 85µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote SPD50N03S2-07
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SPD50N03S2-07 | Infineon Technologies |
 Description: MOSFET N-CH 30V 50A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 4V @ 85µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
SPD50N03S2-07 | Infineon Technologies |
MOSFET N-Ch 30V 50A DPAK-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SPD50N03S2-07 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPD50N03S2-07 |
|
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 50A DPAK-2
MOSFET N-Ch 30V 50A DPAK-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH