Technische Details SPN01N60C3 Infineon
Description: MOSFET N-CH 650V 300MA SOT223-4, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta).
Weitere Produktangebote SPN01N60C3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| SPN01N60C3 | Infineon |
 Uds=600V, Rdsn=5.6 Ohm, Id=0.8 A, SOT-223 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
SPN01N60C3 | Infineon Technologies |
Description: MOSFET N-CH 650V 300MA SOT223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
SPN01N60C3 | Infineon Technologies |
MOSFET N-Ch 650V 300mA SOT-223-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SPN01N60C3 |
|
Hersteller: Infineon
Uds=600V, Rdsn=5.6 Ohm, Id=0.8 A, SOT-223 Транзистори
Uds=600V, Rdsn=5.6 Ohm, Id=0.8 A, SOT-223 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPN01N60C3 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 300MA SOT223-4
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Description: MOSFET N-CH 650V 300MA SOT223-4
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPN01N60C3 |
|
Hersteller: Infineon Technologies
MOSFET N-Ch 650V 300mA SOT-223-3
MOSFET N-Ch 650V 300mA SOT-223-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH