Technische Details SPP02N80C3 INFINEON
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 120µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V.
Weitere Produktangebote SPP02N80C3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SPP02N80C3 | Hersteller : INFINEON |
 09+ TSSOP24 |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPP02N80C3 Produktcode: 47201 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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SPP02N80C3 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 2A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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SPP02N80C3 | Hersteller : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V |
Produkt ist nicht verfügbar |
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SPP02N80C3 | Hersteller : Infineon Technologies |
MOSFET N-Ch 800V 2A TO220-3 CoolMOS C3 |
Produkt ist nicht verfügbar |