SPP11N60CFDXKSA1 Infineon Technologies
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 246+ | 2.28 EUR |
| 500+ | 2.11 EUR |
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Technische Details SPP11N60CFDXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote SPP11N60CFDXKSA1 nach Preis ab 1.92 EUR bis 4.68 EUR
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SPP11N60CFDXKSA1 | Hersteller : Infineon Technologies |
 MOSFETs N-Ch 650V 11A TO220-3 |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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SPP11N60CFDXKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - SPP11N60CFDXKSA1 - SPP11N60 - LOW POWERLEGACY tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 553 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPP11N60CFDXKSA1 | Hersteller : Infineon |
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auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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SPP11N60CFDXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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SPP11N60CFDXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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SPP11N60CFDXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 11A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 500µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |