SPP11N80C3 Infineon Technologies
auf Bestellung 4006 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.51 EUR |
| 10+ | 3.59 EUR |
| 100+ | 2.82 EUR |
| 500+ | 2.34 EUR |
| 1000+ | 2.01 EUR |
| 2500+ | 1.9 EUR |
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Technische Details SPP11N80C3 Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 680µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.
Weitere Produktangebote SPP11N80C3 nach Preis ab 1.52 EUR bis 3.13 EUR
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| SPP11N80C3 | Hersteller : INFINEON TECHNOLOGIES |
 SPP11N80C3 THT N channel transistors |
auf Bestellung 84 Stücke: Lieferzeit 7-14 Tag (e) |
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SPP11N80C3 Produktcode: 111118
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Lieblingsprodukt
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Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 800 V Idd,A: 11 A Rds(on), Ohm: 0,45 Ohm Ciss, pF/Qg, nC: 1600/8 JHGF: THT |
Produkt ist nicht verfügbar
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SPP11N80C3 | Hersteller : Infineon Technologies |
Description: COOLMOS N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 680µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
Produkt ist nicht verfügbar |