SPP12N50C3
Produktcode: 47987
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Technische Details SPP12N50C3
- MOSFET, N COOLMOS TO-220
- Transistor Type:MOSFET
- Transistor Polarity:N
- Cont Current Id:11.6A
- On State Resistance:0.38ohm
- Case Style:TO-220 (SOT-78B)
- Operating Temperature Range:-55`C to +150`C
- SVHC:Cobalt dichloride
- Cont Current Id @ 25`C:11.6A
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Junction Temperature Tj:150`C
- Max Power Dissipation Ptot:125W
- Max Voltage Vds:800V
- Max Voltage Vgs th:3.9V
- Min Junction Temperature, Tj:-55`C
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation:125W
- Power Dissipation Pd:125W
- Pulse Current Idm:34.8A
- Voltage Vds:800V
- Transistor Case Style:TO-220
Weitere Produktangebote SPP12N50C3 nach Preis ab 1.81 EUR bis 1.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SPP12N50C3 | Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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| SPP12N50C3 | INF |
07+; |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SPP12N50C3 |
|
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 267+ | 1.81 EUR |
| SPP12N50C3 |
|
Hersteller: INF
07+;
07+;
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)