SPP77N06S2-12
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auf Bestellung 2300 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SPP77N06S2-12
Description: MOSFET N-CH 55V 80A TO220-3, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 4V @ 93µA, Power Dissipation (Max): 158W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 38A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V.
Weitere Produktangebote SPP77N06S2-12
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SPP77N06S2-12 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO220-3 Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 93µA Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 38A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SPP77N06S2-12 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 93µA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Description: MOSFET N-CH 55V 80A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 93µA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH