SPP80N03S2L04AKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 615 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 249+ | 1.99 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SPP80N03S2L04AKSA1 Infineon Technologies
Description: MOSFET N-CH 30V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V.
Weitere Produktangebote SPP80N03S2L04AKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SPP80N03S2L04AKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 30V 80A TO220-3 |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
|
 |
SPP80N03S2L04AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|
|
|
SPP80N03S2L04AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V |
Produkt ist nicht verfügbar |