SPP80N04S2L-03 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 25 V
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Technische Details SPP80N04S2L-03 Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote SPP80N04S2L-03
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| SPP80N04S2L-03 | INF |
09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SPP80N04S2L-03 |
|
Hersteller: INF
09+
09+
auf Bestellung 5030 Stücke:
Lieferzeit 21-28 Tag (e)