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SPP80N06S205 SIPEX


Hersteller: SIPEX

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Lieferzeit 21-28 Tag (e)
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Technische Details SPP80N06S205 SIPEX

Description: MOSFET N-CH 55V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6790 pF @ 25 V.

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SPP80N06S2-05 Hersteller : INFINEON SP(P,B)80N06S2-05.pdf
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
SPP80N06S205 SPP80N06S205 Hersteller : Infineon Technologies spp_b_80n06s2-05.pdf Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
SPP80N06S2-05 SPP80N06S2-05 Hersteller : Infineon Technologies SP(P,B)80N06S2-05.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6790 pF @ 25 V
Produkt ist nicht verfügbar