SPP80N06S2L-07
Hersteller: auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SPP80N06S2L-07
Description: MOSFET N-CH 55V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 2V @ 150µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4210 pF @ 25 V.
Weitere Produktangebote SPP80N06S2L-07
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SPP80N06S2L-07 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
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SPP80N06S2L-07 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 2V @ 150µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4210 pF @ 25 V |
Produkt ist nicht verfügbar |