Technische Details SPW17N80C3
- MOSFET, N, COOLMOS, TO-247
- Transistor Type:MOSFET
- Max Voltage Vds:800V
- On State Resistance:0.29ohm
- Power Dissipation:208W
- Operating Temperature Range:-55`C to +150`C
- Transistor Case Style:TO-247
- No. of Pins:3
- SVHC:Cobalt dichloride
- Case Style:TO-247
- Cont Current Id:17A
- Cont Current Id @ 25`C:17A
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Junction Temperature Tj:150`C
- Max Power Dissipation Ptot:208W
- Max Voltage Vgs th:3.9V
- Min Junction Temperature, Tj:-55`C
- No. of Transistors:1
- Power Dissipation Pd:208W
- Pulse Current Idm:51A
- Termination Type:Through Hole
- Transistor Polarity:N
- Typ Voltage Vds:800V
- Typ Voltage Vgs th:3V
- Voltage Vds:800V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote SPW17N80C3 nach Preis ab 3.72 EUR bis 11.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPW17N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3 Type of transistor: N-MOSFET On-state resistance: 0.29Ω Mounting: THT Power dissipation: 227W Polarisation: unipolar Technology: CoolMOS™ Drain current: 11A Kind of channel: enhancement Drain-source voltage: 800V Gate-source voltage: ±20V Kind of package: tube Case: PG-TO247-3 |
auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW17N80C3 | Infineon Technologies |
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3 |
auf Bestellung 204 Stücke: Lieferzeit 10-14 Tag (e) |
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| SPW17N80C3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Mounting: THT
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 800V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Mounting: THT
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 800V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.24 EUR |
| 18+ | 4.78 EUR |
| 21+ | 4.07 EUR |
| 30+ | 3.72 EUR |
| SPW17N80C3 |
![]() |
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.77 EUR |
| 10+ | 7.71 EUR |
| 100+ | 5.68 EUR |
| 480+ | 5.02 EUR |
| 1200+ | 4.49 EUR |




