
SPW47N60CFDFKSA1 Infineon Technologies
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
39+ | 14.29 EUR |
100+ | 13.22 EUR |
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Technische Details SPW47N60CFDFKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 46A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 83mOhm @ 29A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.9mA, Supplier Device Package: PG-TO247-3-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 322 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
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SPW47N60CFDFKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW47N60CFDFKSA1 Produktcode: 104224
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![]() ZCODE: 8541290010 |
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SPW47N60CFDFKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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SPW47N60CFDFKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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SPW47N60CFDFKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Power dissipation: 417W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 83mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SPW47N60CFDFKSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 29A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.9mA Supplier Device Package: PG-TO247-3-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 322 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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SPW47N60CFDFKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Power dissipation: 417W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 83mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
Produkt ist nicht verfügbar |