SPW52N50C3FKSA1 Infineon Technologies

Description: MOSFET N-CH 560V 52A TO247-3, Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V, Drain to Source Voltage (Vdss): 560 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO247-3-1, Vgs(th) (Max) @ Id: 3.9V @ 2.7mA, Power Dissipation (Max): 417W (Tc).