SQ1912EH-T1_GE3 Vishay
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 910+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ1912EH-T1_GE3 Vishay
Description: MOSFET 2N-CH 20V 0.8A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ1912EH-T1_GE3 nach Preis ab 0.17 EUR bis 1.02 EUR
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SQ1912EH-T1_GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 20V 0.8A Automotive AEC-Q101 6-Pin SC-70 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ1912EH-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 0.8A Automotive AEC-Q101 6-Pin SC-70 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ1912EH-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.8A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ1912EH-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 20V Vds 0.8A Id AEC-Q101 Qualified |
auf Bestellung 185315 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ1912EH-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.8A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 24615 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ1912EH-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 0.8A Automotive AEC-Q101 6-Pin SC-70 T/R |
auf Bestellung 457 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ1912EH-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 0.8A Automotive AEC-Q101 6-Pin SC-70 T/R |
auf Bestellung 457 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ1912EH-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 0.8A Automotive AEC-Q101 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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SQ1912EH-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 0.8A Automotive 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |