SQ2308CES-T1_BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.34 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.31 EUR |
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Technische Details SQ2308CES-T1_BE3 Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2308CES-T1_BE3 nach Preis ab 0.25 EUR bis 1.27 EUR
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SQ2308CES-T1_BE3 | Hersteller : Vishay / Siliconix |
MOSFETs N-CHANNEL 60V (D-S) |
auf Bestellung 498592 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2308CES-T1_BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 2.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 45867 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2308CES-T1"BE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2308CES-T1"BE3 - MOSFET, N-CH, 60V, 2.3A, SOT-23 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 2.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.125ohm directShipCharge: 25 |
auf Bestellung 31793 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQ2308CES-T1_BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQ2308CES-T1_BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQ2308CES-T1_BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 33203 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQ2308CES-T1_BE3 | Hersteller : Vishay |
Automotive N-Channel 60 V, 175 degree C MOSFET |
Produkt ist nicht verfügbar |