SQ2309ES-T1_BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 335mOhm @ 1.25A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.31 EUR |
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Technische Details SQ2309ES-T1_BE3 Vishay Siliconix
Description: MOSFET P-CH 60V 1.7A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 335mOhm @ 1.25A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2309ES-T1_BE3 nach Preis ab 0.31 EUR bis 1.05 EUR
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SQ2309ES-T1_BE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 1.7A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 335mOhm @ 1.25A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 11633 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2309ES-T1_BE3 | Vishay / Siliconix | MOSFET P-CHANNEL 60V (D-S) |
auf Bestellung 327668 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQ2309ES-T1_BE3 | Vishay Siliconix |
P-канальний ПТ, Udss, В = 60, Id = 1,7 А, Ciss, пФ @ Uds, В = 265 @ 25, Qg, нКл = 8,5 @ 10 В, Rds = 335 мОм @ 1,25 A, 10 В, Ugs(th) = 2,5 В @ 250 мкА, Р, Вт = 2, Тексп, °C = -55...+175, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 37 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| SQ2309ES-T1_BE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 335mOhm @ 1.25A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 1.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 335mOhm @ 1.25A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11633 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 20+ | 0.89 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.39 EUR |
| SQ2309ES-T1_BE3 |
Hersteller: Vishay / Siliconix
MOSFET P-CHANNEL 60V (D-S)
MOSFET P-CHANNEL 60V (D-S)
auf Bestellung 327668 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.05 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.34 EUR |
| 9000+ | 0.31 EUR |
| SQ2309ES-T1_BE3 |
Hersteller: Vishay Siliconix
P-канальний ПТ, Udss, В = 60, Id = 1,7 А, Ciss, пФ @ Uds, В = 265 @ 25, Qg, нКл = 8,5 @ 10 В, Rds = 335 мОм @ 1,25 A, 10 В, Ugs(th) = 2,5 В @ 250 мкА, Р, Вт = 2, Тексп, °C = -55...+175, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
P-канальний ПТ, Udss, В = 60, Id = 1,7 А, Ciss, пФ @ Uds, В = 265 @ 25, Qg, нКл = 8,5 @ 10 В, Rds = 335 мОм @ 1,25 A, 10 В, Ugs(th) = 2,5 В @ 250 мкА, Р, Вт = 2, Тексп, °C = -55...+175, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 37 Stücke: