SQ2318AES-T1_BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.42 EUR |
| 6000+ | 0.38 EUR |
| 9000+ | 0.36 EUR |
| 15000+ | 0.35 EUR |
| 21000+ | 0.33 EUR |
| 30000+ | 0.32 EUR |
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Technische Details SQ2318AES-T1_BE3 Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3W (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote SQ2318AES-T1_BE3 nach Preis ab 0.36 EUR bis 1.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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SQ2318AES-T1_BE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 40V (D-S) |
auf Bestellung 260923 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2318AES-T1"BE3 | VISHAY |
Description: VISHAY - SQ2318AES-T1"BE3 - MOSFET, N-CH, 40V, 8A, SOT-23 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm directShipCharge: 25 SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 87483 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2318AES-T1_BE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 8A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 48297 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQ2318AES-T1_BE3 | Vishay |
Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 90738 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQ2318AES-T1_BE3 |
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Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 40V (D-S)
MOSFETs N-CHANNEL 40V (D-S)
auf Bestellung 260923 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.36 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.36 EUR |
| SQ2318AES-T1"BE3 |
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Hersteller: VISHAY
Description: VISHAY - SQ2318AES-T1"BE3 - MOSFET, N-CH, 40V, 8A, SOT-23
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 3W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Series
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.026ohm
directShipCharge: 25
SVHC: No SVHC (10-Jun-2022)
Description: VISHAY - SQ2318AES-T1"BE3 - MOSFET, N-CH, 40V, 8A, SOT-23
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 3W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Series
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.026ohm
directShipCharge: 25
SVHC: No SVHC (10-Jun-2022)
auf Bestellung 87483 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 176+ | 1.43 EUR |
| 213+ | 1.09 EUR |
| 250+ | 0.86 EUR |
| 295+ | 0.73 EUR |
| 334+ | 0.64 EUR |
| 500+ | 0.56 EUR |
| SQ2318AES-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 48297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.71 EUR |
| 20+ | 1.07 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.48 EUR |
| SQ2318AES-T1_BE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 90738 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 258+ | 0.68 EUR |
| 269+ | 0.64 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.57 EUR |
| 2500+ | 0.55 EUR |
| 5000+ | 0.52 EUR |
| 10000+ | 0.5 EUR |
| 25000+ | 0.49 EUR |