SQ2318AES-T1_BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 40V 8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.32 EUR |
| 9000+ | 0.30 EUR |
| 15000+ | 0.29 EUR |
| 21000+ | 0.28 EUR |
| 30000+ | 0.27 EUR |
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Technische Details SQ2318AES-T1_BE3 Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2318AES-T1_BE3 nach Preis ab 0.28 EUR bis 1.44 EUR
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SQ2318AES-T1_BE3 | Hersteller : Vishay / Siliconix |
MOSFETs N-CHANNEL 40V (D-S) |
auf Bestellung 277270 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2318AES-T1_BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 48297 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2318AES-T1"BE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2318AES-T1"BE3 - MOSFET, N-CH, 40V, 8A, SOT-23 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm directShipCharge: 25 SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 87483 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQ2318AES-T1_BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 90738 Stücke: Lieferzeit 14-21 Tag (e) |
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