SQ2319ADS-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.52 EUR |
| 6000+ | 0.49 EUR |
| 9000+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ2319ADS-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2319ADS-T1_GE3 nach Preis ab 0.46 EUR bis 4.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQ2319ADS-T1_GE3 | Vishay Semiconductors |
MOSFETs P Ch -40Vds 20Vgs AEC-Q101 Qualified |
auf Bestellung 33994 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SQ2319ADS-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 4.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 11540 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SQ2319ADS-T1_GE3 | Vishay |
SQ2319ADS-T1_GE3 P-CH 40V 4,6A 75mOhm SOT-23 Транзистори |
auf Bestellung 1380 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SQ2319ADS-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs P Ch -40Vds 20Vgs AEC-Q101 Qualified
MOSFETs P Ch -40Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 33994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.63 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.5 EUR |
| 6000+ | 0.46 EUR |
| SQ2319ADS-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 4.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 11540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.14 EUR |
| 16+ | 1.33 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.61 EUR |
| SQ2319ADS-T1_GE3 |
|
Hersteller: Vishay
SQ2319ADS-T1_GE3 P-CH 40V 4,6A 75mOhm SOT-23 Транзистори
SQ2319ADS-T1_GE3 P-CH 40V 4,6A 75mOhm SOT-23 Транзистори
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 4.84 EUR |