SQ2398ES-T1_BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.37 EUR |
| 6000+ | 0.35 EUR |
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Technische Details SQ2398ES-T1_BE3 Vishay Siliconix
Description: MOSFET N-CH 100V 1.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2398ES-T1_BE3 nach Preis ab 0.42 EUR bis 1.04 EUR
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SQ2398ES-T1_BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 8545 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2398ES-T1_BE3 | Hersteller : Vishay / Siliconix | MOSFET N-CHANNEL 100V (D-S) |
auf Bestellung 20110 Stücke: Lieferzeit 724-728 Tag (e) |
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