SQ4920EY-T1_BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1057 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4 EUR |
| 10+ | 2.56 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.29 EUR |
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Technische Details SQ4920EY-T1_BE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.4W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ4920EY-T1_BE3 nach Preis ab 1.16 EUR bis 4.07 EUR
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SQ4920EY-T1_BE3 | Hersteller : Vishay Semiconductors |
MOSFETs Dual N-CHANNEL 30 V |
auf Bestellung 4744 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4920EY-T1_BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 8A Automotive AEC-Q101 8-Pin SOIC N T/R |
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SQ4920EY-T1_BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 8A Automotive AEC-Q101 8-Pin SOIC N T/R |
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SQ4920EY-T1_BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.4W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |