SQ9407EY-T1_BE3

Hersteller: Vishay
Trans MOSFET P-CH 60V 4.6A 8-Pin SOIC N T/R Automotive AEC-Q101

Hersteller: Vishay
Trans MOSFET P-CH 60V 4.6A 8-Pin SOIC N T/R Automotive AEC-Q101

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Qualification: AEC-Q101

Hersteller: Vishay Semiconductors
MOSFETs P-CHANNEL 60 V

Hersteller: VISHAY
Description: VISHAY - SQ9407EY-T1_BE3 - Leistungs-MOSFET, p-Kanal, 60 V, 4.6 A, 0.067 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 3.75W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.067ohm

Hersteller: VISHAY
Description: VISHAY - SQ9407EY-T1_BE3 - Leistungs-MOSFET, p-Kanal, 60 V, 4.6 A, 0.067 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99