SQA401CEJW-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: AUTOMOTIVE P-CHANNEL 20 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
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Technische Details SQA401CEJW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 13.6W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote SQA401CEJW-T1_GE3 nach Preis ab 0.22 EUR bis 0.70 EUR
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SQA401CEJW-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET P-CHANNEL 20-V (D-S) 175C MOSFET |
auf Bestellung 41895 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA401CEJW-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 4230 Stücke: Lieferzeit 10-14 Tag (e) |
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