SQA401CEJW-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
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Technische Details SQA401CEJW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: PowerPAK® SC-70-6, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 13.6W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQA401CEJW-T1_GE3 nach Preis ab 0.23 EUR bis 0.88 EUR
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SQA401CEJW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S)Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: PowerPAK® SC-70-6 Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
auf Bestellung 4230 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA401CEJW-T1_GE3 | Vishay Semiconductors |
MOSFETs P-CHANNEL 20-V (D-S) 175C MOSFET |
auf Bestellung 29084 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQA401CEJW-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 4230 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 30+ | 0.6 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.26 EUR |
| SQA401CEJW-T1_GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs P-CHANNEL 20-V (D-S) 175C MOSFET
MOSFETs P-CHANNEL 20-V (D-S) 175C MOSFET
auf Bestellung 29084 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.28 EUR |
| 3000+ | 0.23 EUR |


