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SQA405CEJW-T1_GE3

SQA405CEJW-T1_GE3 Vishay Siliconix


sqa405cejw.pdf
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 39.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQA405CEJW-T1_GE3 Vishay Siliconix

Description: AUTOMOTIVE P-CHANNEL 40 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK®SC-70W-6, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 13.6W (Tc), Rds On (Max) @ Id, Vgs: 39.5mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 6-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote SQA405CEJW-T1_GE3 nach Preis ab 0.28 EUR bis 0.86 EUR

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SQA405CEJW-T1_GE3 SQA405CEJW-T1_GE3 Vishay Siliconix sqa405cejw.pdf Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 39.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4638 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
31+0.58 EUR
100+0.39 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SQA405CEJW-T1_GE3 sqa405cejw.pdf
SQA405CEJW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 39.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
31+0.58 EUR
100+0.39 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH