SQA440CEJW-T1_GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.41 EUR |
| 3000+ | 0.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQA440CEJW-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK®SC-70W-6, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 13.6W (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 6-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQA440CEJW-T1_GE3 nach Preis ab 0.39 EUR bis 1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQA440CEJW-T1_GE3 | Vishay Siliconix |
 Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK®SC-70W-6 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 2050 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQA440CEJW-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2050 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.39 EUR |