SQA470EJ-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 2.25A PPAK SC70, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: PowerPAK® SC-70-6 Single, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 13.6W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR).