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SQAA42CEJW-T1_GE3

SQAA42CEJW-T1_GE3 Vishay Siliconix

sqaa42cejw.pdf
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
Mindestbestellmenge: 17 Stücke
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Technische Details SQAA42CEJW-T1_GE3 Vishay Siliconix

Description: AUTOMOTIVE N-CHANNEL 60V (D-S), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK®SC-70W-6, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 13.6W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel.

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SQAA42CEJW-T1_GE3 SQAA42CEJW-T1_GE3 Vishay Siliconix sqaa42cejw.pdf Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQAA42CEJW-T1_GE3 SQAA42CEJW-T1_GE3 Vishay / Siliconix sqaa42cejw.pdf MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQAA42CEJW-T1_GE3 sqaa42cejw.pdf
SQAA42CEJW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQAA42CEJW-T1_GE3 sqaa42cejw.pdf
SQAA42CEJW-T1_GE3
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH