SQD07N25-350H_GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.73 EUR |
| 10+ | 2.38 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.16 EUR |
| 2000+ | 1.08 EUR |
| 4000+ | 1.04 EUR |
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Technische Details SQD07N25-350H_GE3 Vishay Semiconductors
Description: MOSFET N-CH 250V 7A TO252AA, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 71W (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA.
Weitere Produktangebote SQD07N25-350H_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SQD07N25-350H_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 250V 7A TO252AAVgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SQD07N25-350H_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 250V 7A TO252AA Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SQD07N25-350H-GE3 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQD0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SQD07N25-350H_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 7A TO252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Description: MOSFET N-CH 250V 7A TO252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQD07N25-350H_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 7A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 250V 7A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQD07N25-350H-GE3 |
Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT SQD0
MOSFETs RECOMMENDED ALT SQD0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH