SQD07N25-350H_GE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.44 EUR |
| 10+ | 2.83 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.38 EUR |
| 2000+ | 1.29 EUR |
| 4000+ | 1.24 EUR |
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Technische Details SQD07N25-350H_GE3 Vishay Semiconductors
Description: MOSFET N-CH 250V 7A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V.
Weitere Produktangebote SQD07N25-350H_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SQD07N25-350H_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 250V 7A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SQD07N25-350H_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 250V 7A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SQD07N25-350H-GE3 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQD0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SQD07N25-350H_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4A; Idm: 15A; 71W Mounting: SMD Pulsed drain current: 15A Power dissipation: 71W Gate charge: 29nC Polarisation: unipolar Technology: TrenchFET® Drain current: 4A Kind of channel: enhancement Drain-source voltage: 250V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: DPAK; TO252 On-state resistance: 0.35Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
SQD07N25-350H_GE3 | Vishay |
Trans MOSFET N-CH 250V 7A Automotive AEC-Q101 3-Pin(2+Tab) TO-252AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SQD07N25-350H_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Description: MOSFET N-CH 250V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SQD07N25-350H_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 7A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Description: MOSFET N-CH 250V 7A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQD07N25-350H-GE3 |
Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT SQD0
MOSFETs RECOMMENDED ALT SQD0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQD07N25-350H_GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4A; Idm: 15A; 71W
Mounting: SMD
Pulsed drain current: 15A
Power dissipation: 71W
Gate charge: 29nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 250V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: DPAK; TO252
On-state resistance: 0.35Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4A; Idm: 15A; 71W
Mounting: SMD
Pulsed drain current: 15A
Power dissipation: 71W
Gate charge: 29nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 250V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: DPAK; TO252
On-state resistance: 0.35Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SQD07N25-350H_GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 250V 7A Automotive AEC-Q101 3-Pin(2+Tab) TO-252AA
Trans MOSFET N-CH 250V 7A Automotive AEC-Q101 3-Pin(2+Tab) TO-252AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH