SQD40061EL-T4_GE3 Vishay / Siliconix
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.86 EUR |
| 10+ | 3.24 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.85 EUR |
| 1000+ | 1.71 EUR |
| 2500+ | 1.64 EUR |
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Technische Details SQD40061EL-T4_GE3 Vishay / Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQD40061EL-T4_GE3 nach Preis ab 1.69 EUR bis 5.02 EUR
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SQD40061EL-T4_GE3 | Hersteller : Vishay Siliconix |
 Description: P-CHANNEL 40-V (D-S) 175C MOSFETPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2495 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40061EL-T4_GE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 40-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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