SQD50N10-8m9L_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
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Technische Details SQD50N10-8m9L_GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQD50N10-8m9L_GE3 nach Preis ab 1.11 EUR bis 3.48 EUR
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SQD50N10-8m9L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 50A TO252AA Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 4183 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N10-8m9L_GE3 | Vishay Semiconductors |
MOSFETs 100V 50A 45watt AEC-Q101 Qualified |
auf Bestellung 10477 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQD50N10-8m9L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO252AA
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 50A TO252AA
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4183 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.4 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.31 EUR |
| SQD50N10-8m9L_GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 100V 50A 45watt AEC-Q101 Qualified
MOSFETs 100V 50A 45watt AEC-Q101 Qualified
auf Bestellung 10477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.48 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.29 EUR |
| 2000+ | 1.12 EUR |
| 4000+ | 1.11 EUR |